Demonstration of ${\rm{\beta}-Ga_{2}O_{3}}$ Junction Barrier Schottky Diodes with a Baliga's Figure of Merit of 0.85 ${GW/cm^{2}}$ or a 5A/700 V Handling Capabilities

In this article, we report on demonstrating the first vertical β-Ga2O3 junction barrier Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to compensate for the dilemma of the forfeit of the p-type β-Ga2O3. With this wide-bandgap p-type NiOx, β-Ga2O3 JBS diodes with an area of 100 × 100  μ m2 achieve a breakdown voltage (BV) and specific on -resistance R on,sp of 1715 V and 3.45 mΩ·cm2, respectively, yielding a Baliga's figure of merit (FOM) of BV2/ R on,sp = 0.85 GW/cm2, which is the highest direct-current FOM value among all β-Ga2O3 diodes. Meanwhile, a large size JBS diode with the area of 1 × 1 mm2 shows a forward current IF and BV of 5 A/700 V, which is also the best IF and BV combinations (FOM = 64 MW/cm2) among all published results about large-area Ga2O3 diodes. Dynamic switching characteristics reveal that the diode suffers from a negligible current collapse phenomenon even at a −600 V and 103 s stress, showing the great promise of implementing p-NiO in the future β-Ga2O3 power electronic devices.