Statistical assessment of endurance degradation in high and low resistive states of the HfO 2 -based RRAM
2013
This study discusses variability of the high and low resistance states (HRS and LRS, respectively) during the pulse cycling of the cross-bar 1T1R HfO 2 based RRAM devices. Read current variation in LRS is found to follow a normal distribution while in the HRS, it is described by the log-normal dependency. It has been identified that the endurance degradation primarily occurs due increasing resistance in LRS caused by the shrinkage of the filament size.
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