Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

The effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation-a result in agreement with energetics of defect formation.