Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique

Abstract Diffusion–controlled growth rate of V 3 Ga in the Cu(Ga)/V system changes dramatically because of a small change in Ga content in Cu(Ga). One atomic percent increase from 15 to 16 leads to more than double the product phase layer thickness and a decrease in activation energy from 255 to 142 kJ/mol. Kirkendall marker experiment indicates that V 3 Ga grows because of diffusion of Ga. Role of different factors influencing the diffusion rate of Ga and high growth rate of V 3 Ga are discussed.