Semiconductor microstrip detector with a resistive layer

Abstract A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 × 5 mm 2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ≈ 25 μ m for a strip pitch of 0.5 mm is shown.