III-nitride strain relaxation enabled by porous GaN for optoelectronic applications

InGaN based blue and green LEDs are quite attractive owing to their high efficiency, low power consumption, and high performance even at scaled dimensions. However, for red emission higher indium content in the QWs leads to poor performance due to increased strain in the structure. We will discuss a novel elastic strain relaxation technique using porous GaN pseudo-substrates which will allow enhanced indium uptake in the quantum wells for high-efficiency red InGaN micro-LEDs outperforming AlInGaP based micro-LEDs. Results including green and orange luminescence from micro-LEDs (<5 µm) fabricated on these pseudo-substrates will be discussed.