First generation laser-produced plasma source system for HVM EUV lithography

The 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography is under development. We report latest status of the device which consists of the original concepts (1) CO 2 laser driven Sn plasma, (2) Hybrid CO 2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO 2 , (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. Maximum burst on time power is 69W (100kHz, 0.7 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.3%, duty cycle is 20% at maximum. Continuous operation time is so far up to 3 hours. Debris is efficiently suppressed by pre-pulse plasma formation and magnetic field mitigation system. Long-term performance is now under investigation. Also future plan is updated.