Characterization of small geometry LDD MOSFETs with non-pinned flat band voltage

ll geo metry (short and narrow) erfects in L DD MOSEFTs inco l'pllrat ing the dependence or Ibthand volt age O il chan llellength and w idth is developed. The ,malys is inclu des th e short channe :. narrow width. L DD and DIB L elTects. A n expression I'm th res hold vo ltage hased on th e efrect i ve ch'lrge conta in ed in the ch,lIlncl is ohulined ,lIl d th e I'e sults so oht ai ned are ill gOOlI ag l'ee ment with th e ex periment al d,ll,l. I /(noise is also eva lu ated incorpor,lting th e vo l tage drop in 1/' reg ion ,md ch;lrge induced due to n,l1 ha nd vo ll<1ge. w hich ma tches well w ith ex perimenta l data .