RRAM (Resistive Random Access Memory)-based 1T1R (1 Transistor and 1 RRAM) array applied to FPGA (Field Programmable Gate Array) and manufacturing method thereof

The invention provides an RRAM (Resistive Random Access Memory)-based 1T1R (1 Transistor and 1 RRAM) array applied to an FPGA (Field Programmable Gate Array) and a manufacturing method thereof and belongs to the technical field of information storage. The 1T1R array comprises logical circuits, signal input circuits and signal output circuits, wherein the logical circuits are used for realizing set logic functions; the signal input circuits are connected with the logical circuits and are used for supplying signals to the logical circuits; the signal output circuits are used for outputting signals of the logical circuits; the logical circuits are in parallel connection with one another. According to the array and the manufacturing method thereof, the logical circuits can be set as required, and complicated logic functions are realized based on the connection between the logical circuits and the signal output circuits.