Ablation of aluminum nitride films by nanosecond and femtosecond laser pulses
2009
We present results of comparative study of laser-induced ablation of AlN films with variable content of oxygen as a
surface-doping element. The films deposited on sapphire substrate were ablated by a single nanosecond pulse at
wavelength 248 nm, and by a single femtosecond pulse at wavelength 775 nm in air at normal pressure. Ablation craters
were inspected by AFM and Nomarski high-resolution microscope. Irradiation by nanosecond pulses leads to a
significant removal of material accompanied by extensive thermal effects, chemical modification of the films around the
ablation craters and formation of specific defect structures next to the craters. Remarkable feature of the nanosecond
experiments was total absence of thermo-mechanical fracturing near the edges of ablation craters. The femtosecond
pulses produced very gentle ablation removing sub-micrometer layers of the films. No remarkable signs of thermal,
thermo-mechanical or chemical effects were found on the films after the femtosecond ablation. We discuss mechanisms
responsible for the specific ablation effects and morphology of the ablation craters.
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