Semiconductor optoelectronic materials
1990
The author reviews semiconductor materials for optoelectronic devices, with special emphasis on the use of III-V semiconductor materials such as gallium arsenide and indium phosphide for light emission, and the new possibilities emerging from the use of bandgap engineering concepts, especially multiquantum wells and superlattices. >
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI