Separation of the intrinsic and extrinsic mechanisms of the photo-induced anomalous Hall effect

Abstract The photocurrent spectra induced by the anomalous Hall effect (AHE) of the (001)-oriented GaAs/AlGaAs quantum wells (QWs) with well width of 3 and 7 nm have been investigated at room temperature. Ultra-thin InAs layers with a thickness of 1 monolayer have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry of the QWs. It is demonstrated that the AHE current can be effectively tuned by the inserted ultra-thin InAs layers and by the well width. A method has been proposed to separate the intrinsic and extrinsic mechanisms of the AHE, which can be also applied to spin Hall effect.