Adjusting the SnZn defects in Cu2ZnSn(S,Se)4 absorber layer via Ge4+ implanting for efficient kesterite solar cells

Abstract The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage (Voc) deficit. Recently, SnZn deep point defect and associative defect cluster have been recognized as the main culprit for the Voc losses. Therefore, manipulating the deep-level donor of SnZn antisite defects is crucial for breaking through the bottleneck of present Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic technology. In this study, the SnZn deep traps in CZTSSe absorber layer are suppressed by incorporation of Ge. The energy levels and concentration of SnZn defects measured by deep-level transient spectroscopy (DLTS) decrease significantly. In addition, the grain growth of CZTSSe films is also promoted due to Ge implantation, yielding the high quality absorber layer. Consequently, the efficiency of CZTSSe solar cells increases from 9.15% to 11.48%, largely attributed to the 41 mV Voc increment.