Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ n S α . The result doesn't depend on contact resistance. The method provides a physically sound value: V G -V T is proportional to the channel carrier density as checked with V G -dependent Hall measurements in companion gated Hall devices.