Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

This letter presents an experimental study of the junction leakage RTS (JL-RTS) in a large set of MOSFET p-n junctions. Arrays of MOSFETs are used to statistically study the effects of the temperature, the electric field, and the source/drain design. The results, supported by ab initio molecular dynamic simulations, advocate for the adoption of the structural fluctuation model over the state charge fluctuation model to describe the defects at the origin of the phenomena.