Ion Implant Doping for n-Type Cz High Efficiency Industrial Boron Emitter Solar Cells with Single Activation Process

Rear grid Ag SiO2/SiN passivation Ion implant doping for n-type Cz high efficiency industrial boron emitter solar cells with single activation process Adeline Lanternea*, Y. Veschettia, R. Cabala, S. Galla, D. Ramappab, M. Sheoranb, M. Emsleyb aCEA, LITEN, INES, 50 avenue du Lac Leman, BP 332, 73377 Le Bourget du Lac, France bVarian Semiconductor Equipment, Applied Materials, 3050 Bowers Avenue, Santa Clara, CA 95054 United States *Contact : Adeline.LANTERNE@cea.fr