Deposition of Ti-Zr-O-N films by reactive magnetron sputtering of Zr target with Ti ribbons

Abstract In this work, we explore the addition of Ti ribbons on the racetrack of a Zr target to prepare Zr-O-N films including Ti, by reactive magnetron sputtering, with a mixture of N2 and O2 as reactive gases. This approach is simple and not invasive, it avoids the modification of the target and minimizes its contamination. These films were compared in terms of chemical composition, density, film growth and crystallographic structure with others prepared in identical conditions without Ti ribbons. In addition, the composition and density of the films were compared with crystallographic references from literature. The color and electrical properties of the films were evaluated as well. It was observed that poisoning of the Zr target is promoted by the increase of the N2 + O2 flow and the reduction of magnetron current, but it is retarded by the introduction of the Ti ribbons. This effect was particularly remarkable at lower target current, since the sputtering is confined in areas nearer to the racetrack, where the Ti ribbons are located. To account for the poisoning of the target and compare it among the different samples, a ‘poisoning parameter’ was defined, using a combination of the chemical composition and of the deposition rate. The color and electrical properties of the films correlate surprisingly well with the oxygen-to-metal ratio of the films, while the concentration of N does not seem to play any significant role.