Improvement of n/i interface layer properties in microcrystalline silicon solar cell

Properties of n-i interface are critical for hydrogenated microcrystalline silicon (μc-Si:H )substrate-type (n–i–p) solar cell as it affects carrier collection, which is visible in the red response . Here, we report a remarkable improvement in visible-infrared responses upon hydrogen plasma treatment （HPT）of n/i interface. We demonstrate that hydrogen plasma treatment in the initial stage of a μc-Si:H i layer growth affects the red response of μc-Si:H solar cell. At the optimal deposition condition, 18% higher short-circuit current density was obtained than its count part without using HPT