Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor

This paper proposes a unique Tunnel Field-Effect Transistor (TFET) structure in which the gate oxide is modified, and the performances of the device are analyzed using Sentaurus, TCAD simulator. The gate oxide is submerged by optimized depth into the channel, as a result of which the OFF-state current (IOFF) of the proposed device reduces. Because of the better alignment of the energy bands and reduction in tunneling width, the ON-state current (ION) of Modified Gate Oxide Double Gate TFET (MGO DGTFET) is improved in comparison with the conventional Double Gate TFET (DGTFET). In contrast to the conventional DGTFET, IOFF is decremented by 5 × 102 times, and ION is incremented by 102 times; as a result, the ION/IOFF ratio is incremented by 3 × 105 times. Ambipolar current (IAmb) and subthreshold slope (SS) are also reduced in MGO DGTFET by a considerable margin. The MGO DGTFET’s superior performance makes it a good option for low-power applications.