The optical and electrical properties of TeInSb films during their phase transition

Abstract The crystallization processes of amorphous Te x In 0.6− x Sb 0.4 (0.24 ⩽ x ⩽ 0.42) films prepated by radio frequency sputtering were studied. Their electrical resistance, reflectance and transmittance were measured. The imaginary part of the dielectric constant 2 nk , the optical absorption coefficient α and the optical gap for the TeInSb films have been obtained as a function of photon energy. During the phase transition, their structure, optical and electrical properties exhibited great changes. The relationships between the structure and the optical and electrical properties were discussed. TeInSb films have a very complicated crystallization process. Two main crystalline polymorphs, In 2 Te 3 and In 4 Sb 1.2 Te 2.8 , existed after crystallization and a β phase (Sb, Te) was observed when the Te content increased. It was found that the crystallization processes varied with different Te contents.