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An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon
An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon
1992
A. D. Marwick
M. Wittmer
G. S. Oehrlein
Keywords:
Isothermal process
Hydrogen
Metallurgy
Materials science
Silicon
Correction
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