Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution

Sub-micron pixels have been widely adopted in recent CMOS image sensors to implement high resolution cameras in small form factors, i.e. slim mobile-phones. Even with shrinking pixels, customers demand higher image quality, and the pixel performance must remain comparable to that of the previous generations. Conventionally, to suppress the optical crosstalk between pixels, a metal grid has been used as an isolation structure between adjacent color filters. However, as the pixel size continues to shrink to the sub-micron regime, an optical loss increases because the focal spot size of the pixel’s microlens does not downscale accordingly with the decreasing pixel size due to the diffraction limit: the light absorption inevitably occurs in the metal grid. For the first time, we have demonstrated a new lossless, dielectric-only grid scheme. The result shows 29 % increase in sensitivity and +1.2-dB enhancement in Y-SNR when compared to the previous hybrid metal-and-dielectric grid.