The optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

An optoelectronic semiconductor body (100) comprises a semiconductor layer sequence (1) having a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type and a between the first layer (10) and the second layer (12) disposed active layer (11) which absorbs electromagnetic radiation in normal operation or emitted. In the semiconductor body (100) is a plurality of juxtaposed in the lateral direction of injection portions (2) is present, wherein within each injection region (2), the semiconductor layer sequence (1) is doped in such a way that throughout the injection region (2), the semiconductor layer sequence (1) having the same conductivity type as the first layer (10). Each injection zone (2) penetrating from the first layer (10), the active layer (11) at least partially. Further, each injection region (2) laterally from a continuous web of the active layer (11) surrounded, in which the active layer (11) is less than or oppositely doped than the injection site (2). In operation of the semiconductor body (100) move charge carriers at least partially from the first layer (10) in the injection zones (2) and is injected from there directly into the active layer (11).