RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations

Here we demonstrate a novel quasi-3D simulation technique for partially depleted RFSOI MOSFETs, modeling the use of oxygen-inserted (OI) layers to form a p+ ground plane in the SOI by immobilizing boron acceptors within the SOI layer. Using a custom process model, 2D “slice” device simulations along the device width, and post-processing for the electrostatic potential variation between slices, we show improved potential uniformity due to the 20% to 90% superior body conductance from the ground plane. Results agree with 3D simulations with a matched mesh, although the quasi-3D method allows for a finer mesh suitable for treating the steep doping gradients associated with the OI ground plane.