Dechanneling of H and He ions in silicon

Abstract Dechanneling of protons and helium ions in silicon crystals was investigated with the backscattering method. The energy spectra of the scattered particles were measured using an annular surface-barrier detector. The bombardment energies E 1, were 0.6, 1.0 and 1.5 MeV. Dechanneling in the , channels was measured at 298°K and at 473°K. The random fraction of the beam vs. penetration depth was obtained by comparing the backscattering yields for aligned and random orientations of the silicon crystal. It was found that by scaling the axial penetration depth, z, with zρ2 or with z/E 1 it was not possible to make the dechanneling curves measured at different temperatures or with different energies coincide.