Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 × 1 surfaces studied using core-level X-ray photoelectron spectroscopy

Abstract We investigated the initial oxidation of ultrathin hafnium (Hf) film on Si(100)-2 × 1 [Hf/Si(100)] using high resolution Hf 4f5/2, 7/2, Si 2p1/2, 3/2, and O 1s core-level photoelectron spectroscopy. Ultrathin Hf/Si(100) film was prepared using electron-beam evaporation in an ultrahigh vacuum chamber below 1.5 × 10−8 Pa. Our results revealed the formation of metallic Hf layers containing a few Si atoms on the Si(100)-2 × 1 substrate. A Hf monosilicide (HfSi) component was also formed in the vicinity of the interface region. Metallic Hf rapidly oxidized, transforming into hafnium dioxide (HfO2) and its suboxides, after exposure to O2 molecules at