Efficient antireflective downconversion Er3+ doped ZnO/Si thin film

Abstract This study is an investigation of the potential of Er doped ZnO thin films for downconversion photons and an antireflective layer when placed in front of the silicon solar cells. We optimized the properties of the film with appropriate deposition conditions on Si (111) substrate by aerosol assisted chemical vapor deposition (AACVD) process. An enhancement of both crystallinity and optical response was achieved in the case of film doped with 2.504 at.% Er 3+ . A low reflectance and high refractive index of the film were obtained at around 632 nm. Downconversion process was also reached for this film under visible excitation to near-infrared (NIR) 980 nm photons useful for Si solar cell.