Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology
2013
This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical variability sources random discrete dopants, gate-edge roughness, fi-edge roughness, metal-gate granularity and random interface trapped charges in N/PBTI are considered.
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