Enhancement of Light-output of GaN-based Light-emitting Diodes by Bias-assisted Photoelectrochemical oxidation of p-GaN in H 2 O

An enhancement of GaN-based LEDs light output using photoelectrochemical (PEC) oxidation method via H 2 O on the p-GaN surface was demonstrated. The output light was improved 37% after 45min PEC oxidation.