Initial experience establishing an EUV baseline lithography process for manufacturability assessment
2007
The International Venture for Nanolithography (INVENT) initiative announced in mid 2005, a unique industry-university
consortium between the College of Nanoscale Science and Engineering at Albany and a group of leading edge
integrated device manufacturers, has launched an extensive R&D program on EUV lithography (EUVL). The overall
scope of the INVENT EUVL program, the status of our efforts to establish a baseline lithography process on a full-field
EUVL scanner, and our progress in evaluating EUV resist materials, in designing a custom reticle for scanner
characterization and in developing an actinic EUV mask imaging microscope, are discussed.
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