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Non-radiative Recombination Lifetime and Effective Dislocation Radius in an n-GaN Layer on M-3D Substrates
Non-radiative Recombination Lifetime and Effective Dislocation Radius in an n-GaN Layer on M-3D Substrates
2021
Kazuhiro Mochizuki
Hiroshi Ohta
Fumimasa Horikiri
Tomoyoshi Mishima
Keywords:
Materials science
Non-radiative recombination
Condensed matter physics
Gallium nitride
Radius
Dislocation
layer
Correction
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