Growth, spectroscopic, diode-pumped mid-infrared laser properties of Er:GSAG crystal

Abstract A great potential mid-infrared laser crystal of heavily Er3+ doped GSAG crystal with high optical quality is successfully grown by Cz method. The crystal quality of Er:GSAG crystal is determined by XRC. The structure parameters of Er:GSAG crystal are obtained by the X-ray Rietveld refinement method (a = b = c = 12.3196 A). The absorption cross section at 961 nm and 967 nm are 0.381 × 10−21 cm2 and 0.414 × 10−21 cm2, respectively. The 962 nm laser diode end-pumped Er:GSAG laser operated at 2828 nm is demonstrated for the first time. The performance of Er:GSAG laser is investigated in great detail. A maximum output power of Er:GSAG laser is 410 mW when pumped by 962 nm LD at 300 Hz and 0.5 ms. Simulating results display the highest temperatures of Er:GSAG laser spot is 345.8 K, indicating a small thermal lensing effect of Er:GSAG crystal. Besides, the laser performance of Er:GSAG crystals which irradiate by different doses of gamma-ray are used to investigated its potential for working in the radiation resistance environment. The results show the relatively minor differences on the Er:GSAG lasers performance, indicating a great potential of Er:GSAG crystal in radiant environment application.