THE QUATERNATE Cu(In,Ga)Se2 FOR THIN FILM PHOTOVOLTAIC CELL

The researches on the solar cells in thin layers co ntaining CuInSe 2 showed the importance of this compound for photovoltaic conversion. The introduction of Galliu m, in substitution of Indium, was in order to allow the creation of CIGS structure, which could constitute one of the basic materials for the most powerful solar cells. This work presents a simulation of the characterist ics and performance of the photovoltaic cell at thi n layers CdS/CIGS. During the calculation of the photocurrent delivere d by each zone of the cell, we noticed that the cur rent of the ZCE is the current dominant in the cell. The simulation of equ ation I(V) by the method of Newton enables us to ex tract the output characteristics of this structure to know the conve rsion efficiency η, the short-circuit current Isc, the open circuit t ension Vco, and the form factor FF. In order to know the i nfluence of the doping on the response spectral, we produce the response spectral according to doping of the base and the em itter, respectively . 1. Results