TID and SEGR Radiation Characterisation of European COTS Power MOSFETs with Respect to Space Application Electronics

We investigated TID radiation response and SEGR susceptibility of two COTS power MOSFETs by exposing them to Co-60 photons with 100 krad(Si) and various heavy ion fields of LET between 18.5 and 60 MeV mg-1cm-2.