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Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate
Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate
2015
M.H. Lee
C. Liu
P.G. Cheng
C.-C. Cheng
K.Y. Chu
M.J. Xie
S.-N. Liu
J.W. Lee
S.J. Huang
M. H. Liao
Keywords:
Negative impedance converter
Voltage
Electronic engineering
Ferroelectricity
Materials science
double gate
Optoelectronics
Correction
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