Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

Abstract While the dose-rate effect of ion implantation in Si is well known, a quantitative description of the amount of damage as a function of dose-rate has only been given for self-implantation. In order to investigate the dose-rate effect for light ion implantation, we have implanted 30 keV N at room temperature at dose-rates between 10 10 and 5 × 10 12  cm −2  s −1 and measured the resulting damage by 30 keV B implanted in [1 1 0] channeling direction by SIMS. In addition one sample has been prepared with the N implant performed at liquid nitrogen temperature. We propose a method to extract the relative amount of damage from the channeling profiles. The amount of damage caused by the N implant shows a sigmoidal dependence on the dose-rate with a transition region between 10 12 and 5 × 10 12  cm −2  s −1 where the damage increases by a factor of 1.6. This behavior is in contrast to the power law found for self-implantation.