Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells

We describe 2.5Mm wide Ridge Waveguide Lasers emitting in the wavelength range 1045nm-1065nm. These are fabricated from strained layer single quantum well epitaxial heterostructures with 30%-31% InAs in the quantum well. The devices exhibit stable single spatial mode, single spectral line operation over a wide range of output power and temperature. Preliminary data suggests that reliable high power CW operation may be obtained.