The Investigation on Drain-Source On-State Resistance of SiC power MOSFETs from Single Event Effects Experiment

The forward resistance of the SiC power MOSFETs is an important parameter that affects the conductivity device. In order to evaluate the electrical properties of the sample after single-particle irradiation and the effect of changes on its function. In this paper, SiC power MOSFETs single-particle irradiation test after the test sample as the object, Using voltammetry to study V DS -I DS output characteristics and drain-source conduction characteristics. It gives a different V DS -I DS output characteristic parameters of the test samples and drain source on-state resistance with different drain-source bias voltages the law of change. It is pointed out that the internal unit damage after irradiation by single event irradiation of SiC power MOSFETs devices cause the change of the on resistance, it show that anti-single-event reinforcement design to provide reference by SiC power MOSFET devices.