Stencil lithography for organic thin-film transistors with a channel length of 300 nm

Abstract For some of the more demanding applications envisioned for organic transistors, lateral device dimensions of less than 1 μm may be necessary or should at least be explored in order to evaluate the scalability of organic transistors. Using stencil lithography based on high-resolution silicon stencil masks and employing two small-molecule organic semiconductors with good long-term air stability, we have fabricated organic p-channel and n-channel transistors with a channel length of 0.3 μm. Owing to the small channel length, the transistors have large channel-width-normalized transconductances (1.5 S/m for the p-channel and 0.2 S/m for the n-channel transistors). In addition, the transistors have steep subthreshold slopes (80 and 200 mV/decade) and large on/off current ratios (10 6 ).