Interacting edge states in quantum wires

Abstract We investigate the longitudinal and transversal magneto resistance in quantum wires prepared on high mobility AlGaAs-GaAs heterojunctions. In the quantum Hall regime the extension of edge states is so large that in our narrow channels states of opposing edges are interacting. In the experiment plateau-like regions are still discernible in the Hall resistance although the resistance values are significantly larger than the plateau values h/e 2 n, where n is an integer. The experimental observations are discussed with a model that introduces phenomenological transfer times between adjacent edge states. From our experimental data we evaluate a rate for transfer across the wire that is of the same order as the transfer rate between edge states on the same side.