Multichip thin-film technology on silicon

A novel hybrid technique that uses pretested integrated circuits mounted into holes etched in a silicon wafer has been developed. The chips are interconnected with planar thin-film metallization. This approach achieves near-wafer-scale-integration density, while allowing the use of separately fabricated and tested devices. Test wafers with three monolithic chips and one chip mounted in a hole were fabricated as proof of concept. The key processes developed included fabrication of metallized and patterned wafers with etched holes, mounting of die in etched holes with planar topside topology, and deposition and patterning of the interlevel dielectric and metal links. An organic resin derived from benzocyclobutene was evaluated as the interlevel dielectric. Wafers were thermally cycled to evaluate the compatibility of materials and the process. No cracks or chip movement were observed after 50 cycles from -25 degrees C to +85 degrees C. >