An innovative silicon power device (i-Si) through time and space control of a stored carrier (TASC)

An innovative silicon power device (i-Si) made entirely from silicon, which has an extremely low inverter loss beyond that of a conventional IGBT and a pn diode, is proposed. The i-Si is composed of a dual side-gate high-conductivity IGBT (HiGT) through time and space control of a stored carrier (TASC) and a novel MOS controllable stored-carrier diode (MOSD) by additional MOS gates. It is demonstrated that a 6.5 kV i-Si has a fabricated dual side-gate HiGT through TASC with a −36% collector-emitter saturation voltage and −27% turn-off loss of the conventional planar-gate IGBT and has a simulated MOSD with a −32% forward voltage drop and −64% reverse recovery loss of the conventional pn diode. As a result, the 6.5 kV i-Si has shown −40% inverter loss, similar to that of SiC-MOSFET.