Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Addition of Pt to Ni silicide produces a robust [Ni x Pt (1-x) ]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi 2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.