Open spin levels effect in the localized states on nanosilicon doped with oxygen under the magnetic moment of metal atoms

Abstract Magnetism in a non-magnetic material by manipulating its structure at the nanoscale is created, where many structural impurities and their defects have unpaired spins to create a magnetically ordered state. The magnetic properties of the non-magnetic metal atoms (Au or Al) adsorbed on impuritied nanosilicon surface were investigated, where the opening spin levels (OSL) effect in the localized states was obviously observed on nanosilicon doped with oxygen under the magnetic moment of these metal atoms. Here, the splitting gap of individual two-level spin ±1/2 states isolated in the localized states increases to order of 100 meV in the photovaltaic system consisting of the quantum dots or the quantum layers of silicon prepared by using pulsed laser in oxygen environment. It is interesting to make a comparison with the OSL effect in the localized states under the magnetic moment of magnetic metal Fe or Co adsorbed on nanosilicon surface in the detailed simulating calculations.