Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Zhiliang Chen,Yu Yu,Lufan Jin,Yifan Li,Qingyan Li,Tengteng Li,Jie Li,Hongliang Zhao,Yating Zhang,Haitao Dai,Jianquan Yao

Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

2021

Zhiliang Chen
Yu Yu
Lufan Jin
Yifan Li
Qingyan Li
Tengteng Li
Jie Li
Hongliang Zhao
Yating Zhang
Haitao Dai
Jianquan Yao

Correction for ‘Broadband photoelectric tunable quantum dot based resistive random access memory’ by Zhiliang Chen et al., J. Mater. Chem. C, 2020, 8, 2178–2185, DOI: 10.1039/C9TC06230K.

Keywords:

Materials science
Optoelectronics
Photoelectric effect
Quantum dot
Resistive random-access memory
Broadband

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