A process for the production of semiconductor laser elements and semiconductor laser element

In at least one embodiment, the method for the production of semiconductor laser elements (1) is arranged and comprising the steps of: A) providing a carrier assembly (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a grown thereon semiconductor layer sequence (32) C) generating predetermined breaking points (35) on one of the semiconductor layer sequence (32) facing away from the substrate lower side (34) of the growth substrate (31), D) attaching the laser bar (30) on a carrier top (23) of the carrier assembly (20), wherein the attachment is carried out at an elevated temperature and is followed by cooling, and E) separation of the semiconductor laser elements (1), wherein the steps B) are performed in the order given to E).