Energy-Efficient Hybrid-RAM with Hybrid Bit-Serial based VMM Support
2021
This work presents HRAM, a SRAM-based hybrid memory bit-cell for energy-efficient in-memory computing purpose. The HRAM bit-cell consists of conventional 6T-SRAM for static data storage, and extra one accessing transistor and capacitor for caching data temporarily then conduct the computation within the HRAM array. As the Vector-Matrix Multiplication (VMM) is the dominant operation of neural network inference, performing the VMM in bit-serial fashion is a popular method in recent works. Meanwhile, there are two variants of bit-serial VMM, digital and analog VMM respectively, which fits for varying network topology (e.g., ResNet and MobileNet correspondingly). Through designing re-configurable sensing module and peripherals, our HRAM can be configured to conduct both DVMM and AVMM efficiently. With 65nm technology, the cross-layer simulation indicates that the HRAM based in-memory computing accelerator outperforms the state-of-the-art CSRAM and MBC design by 1.94×/1.81× and 1.95×/11× respectively, in energy efficiency for ResNet-50/MobileNet-V2.
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