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水蒸気を用いた表面酸化制御InAlN/GaN MOS-HEMT (電子デバイス)
水蒸気を用いた表面酸化制御InAlN/GaN MOS-HEMT (電子デバイス)
2016
sirou ozaki
gouzou makiyama
tosihiro taki
youiti kamada
yuu satou
yositaka araida
naoya okamoto
kazukiyo tunenobu
Keywords:
Analytical chemistry
Water vapor
High-electron-mobility transistor
Materials science
Optoelectronics
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