Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25–1.28 eV and an electron Hall mobility as high as 395 cm2 V−1 s−1 was measured. The films were n-type with carrier concentrations in the 1018–1019 cm−3 range.