Effect of bias dependence of substrate NPN transistor on total dose irradiation

In this paper, effect of bias dependence of substrate NPN (SNPN) transistors on total dose radiation is investigated. By considering of bulk field and fringing electric field in the oxide, the degradation mechanisms are discussed in numerical simulations. Experimental results show that the applied emitter voltage and the emitter-base junction bias play important roles in the total dose irradiation effect of SNPN transistors, which is agreement with the theoretical analysis.